Infineon IRFHM3911TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFHM3911TRPBF

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)760pF

Technical details

N-Channel 100V 2.8W Surface Mount PQFN-8L(3.3x3.3)

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