Infineon · FETs & Power MOSFETs · MPN IRFHE4250DTRPBF
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| Pd - Power Dissipation | 156W |
| RDS(on) | 4.1mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Drain to Source Voltage | 25V |
| Reverse Transfer Capacitance (Crss@Vds) | 137pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.735nF |
| Gate Charge(Qg) | 53nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
60A 156W 4.1mΩ@4.5V 2.1V 2 N-Channel PQFN-32(6x6) FET, MOSFET Arrays RoHS