Infineon IRFH8337TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH8337TRPBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)16.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)12.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF
TypeN-Channel

Technical details

30V 16.2A 2.35V 27W 12.8mΩ@10V 1 N-channel N-Channel PQFN(5x6) Single FETs, MOSFETs RoHS

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