Infineon IRFH8316TRPBF-IR

Infineon · FETs & Power MOSFETs · MPN IRFH8316TRPBF-IR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)30nC@10V
Output Capacitance(Coss)740pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation59W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)4.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.61nF
TypeN-Channel

Technical details

30V 120A 2.2V 59W 4.3mΩ@4.5V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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