Infineon · FETs & Power MOSFETs · MPN IRFH8202TRPBF
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 1.758nF |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.35V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 828pF |
| RDS(on) | 1.05mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.174nF |
| Type | N-Channel |
25V 2.35V 160W 1.05mΩ@10V 1 N-channel N-Channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS