Infineon IRFH8201TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH8201TRPBF

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)49A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.35V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)850pF
RDS(on)0.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.33nF

Technical details

N-Channel 25V 49A 3.6W Surface Mount TDSON-8

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