Infineon IRFH6200TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH6200TRPBF

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Specifications

Gate Charge(Qg)155nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)2.89nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)2.18nF
RDS(on)0.99mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)10.89nF
TypeN-Channel

Technical details

N-Channel 20V 100A 3.6W Surface Mount PQFN-8(5x6)

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