Infineon IRFH5302TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH5302TRPBF

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)890pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)3.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.4nF
TypeN-Channel

Technical details

N-Channel 30V 100A 100W Surface Mount PQFN-8(5x6)

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