Infineon · FETs & Power MOSFETs · MPN IRFH5210TRPBF
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| Gate Charge(Qg) | 40nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 14.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.57nF |
100V 55A 104W Surface Mount PQFN-8(5x6)