Infineon IRFH5110TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH5110TRPBF

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)63A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)121pF
RDS(on)12.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.152nF

Technical details

100V 63A 3.6W Surface Mount PQFN-8(5x6)

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