Infineon IRFH5020TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH5020TRPBF

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)5.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation3.6W;8.3W
RDS(on)55mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.29nF

Technical details

N-Channel 200V 5.1A 3.6W 8.3W Surface Mount PQFN-8(5x6)

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