Infineon IRFH5007TRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH5007TRPBF

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)510pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.29nF
TypeN-Channel

Technical details

75V 100A 4V 156W 5.9mΩ@10V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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