Infineon IRFH4257DTRPBF

Infineon · FETs & Power MOSFETs · MPN IRFH4257DTRPBF

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Specifications

Current - Continuous Drain(Id)111A
Pd - Power Dissipation28W
RDS(on)4.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage25V
Reverse Transfer Capacitance (Crss@Vds)237pF
Number2 N-Channel
Input Capacitance(Ciss)3.161nF
Gate Charge(Qg)35nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

111A 28W 4.7mΩ@4.5V 2.1V 2 N-Channel PowerVDFN-8 FET, MOSFET Arrays RoHS

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