Infineon IRFF313

Infineon · FETs & Power MOSFETs · MPN IRFF313

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage350V
Current - Continuous Drain(Id)2.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

350V 2.5A 25W 5Ω 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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