Infineon · FETs & Power MOSFETs · MPN IRFF223
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 15nC@10V |
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 450pF |
150V 3A 4V 20W 1.2Ω@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS