Infineon · FETs & Power MOSFETs · MPN IRFD9120PbF
No reviews yet — be the first to review Infineon IRFD9120PbF.
| Gate Charge(Qg) | 18nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 170pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 390pF |
| Type | P-Channel |
100V 1A 4V 1.3W 600mΩ@10V 1 P-Channel P-Channel HEXDIP-4 Single FETs, MOSFETs RoHS