Infineon · FETs & Power MOSFETs · MPN IRFBA90N20DPBF
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| Gate Charge(Qg) | 240nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 98A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 650W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
200V 98A 3V 650W 23mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS