Infineon IRFB7530PBF

Infineon · FETs & Power MOSFETs · MPN IRFB7530PBF

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Specifications

Gate Charge(Qg)411nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)295A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)806pF
RDS(on)1.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.703nF

Technical details

N-Channel 60V 295A 375W Through Hole TO-220AB

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