Infineon IRFB7434PBF

Infineon · FETs & Power MOSFETs · MPN IRFB7434PBF

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Specifications

Gate Charge(Qg)216nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.54nF
Current - Continuous Drain(Id)317A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation294W
Reverse Transfer Capacitance (Crss@Vds)1.14nF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.82nF
TypeN-Channel

Technical details

N-Channel 40V 317A 294W Through Hole TO-220AB

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