Infineon · FETs & Power MOSFETs · MPN IRFB59N10DPBF
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| Gate Charge(Qg) | 114nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.45nF |
100V 59A 200W Through Hole TO-220AB