Infineon IRFB52N15DPBF

Infineon · FETs & Power MOSFETs · MPN IRFB52N15DPBF

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)590pF
Current - Continuous Drain(Id)51A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.77nF
TypeN-Channel

Technical details

N-Channel 150V 51A Through Hole TO-220AB

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