Infineon IRFB4710PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4710PBF

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Specifications

Configuration-
Gate Charge(Qg)170nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.16nF
TypeN-Channel

Technical details

N-Channel 100V 75A 200W Through Hole TO-220AB

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