Infineon IRFB4610PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4610PBF

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Specifications

Gate Charge(Qg)140nC
Drain to Source Voltage100V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)73A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.55nF
TypeN-Channel

Technical details

N-Channel 100V 73A 190W Through Hole TO-220AB

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