Infineon IRFB4410PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4410PBF

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Specifications

Gate Charge(Qg)180nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)96A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.15nF
TypeN-Channel

Technical details

N-Channel 100V 96A 250W Through Hole TO-220AB

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