Infineon IRFB4332PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4332PBF

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Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)530pF
Current - Continuous Drain(Id)60A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation390W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)29mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.86nF
TypeN-Channel

Technical details

N-Channel 250V 60A 390W Through Hole TO-220AB

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