Infineon IRFB4310PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4310PBF

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Specifications

Gate Charge(Qg)170nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)5.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.67nF

Technical details

N-Channel 100V 130A 300W Through Hole ITO-220AB-3

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