Infineon IRFB42N20DPBF

Infineon · FETs & Power MOSFETs · MPN IRFB42N20DPBF

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Specifications

Gate Charge(Qg)140nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)55mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.43nF

Technical details

200V 44A 330W Through Hole TO-220AB

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