Infineon · FETs & Power MOSFETs · MPN IRFB4229PBF
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 46A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 330W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 46mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.56nF |
250V 46A Through Hole TO-220AB