Infineon IRFB4227PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4227PBF

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Specifications

Configuration-
Gate Charge(Qg)98nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)65A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.6nF

Technical details

N-Channel 200V 65A 330W Through Hole TO-220AB

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