Infineon IRFB4137PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4137PBF

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage300V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation341W
Reverse Transfer Capacitance (Crss@Vds)77pF
RDS(on)56mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.168nF

Technical details

N-Channel 300V 38A 341W Through Hole TO-220

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