Infineon IRFB4127PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4127PBF

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)76A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)86pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.38nF
TypeN-Channel

Technical details

N-Channel 200V 76A 375W Through Hole ITO-220AB-3

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