Infineon IRFB4020PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4020PBF

No reviews yet — be the first to review Infineon IRFB4020PBF.

Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF

Technical details

N-Channel 200V 18A 100W Through Hole TO-220AB

Related FETs & Power MOSFETs