Infineon IRFB4019PBF

Infineon · FETs & Power MOSFETs · MPN IRFB4019PBF

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)20nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)74pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

150V 17A 4.9V 80W 95mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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