Infineon IRFB38N20DPBF

Infineon · FETs & Power MOSFETs · MPN IRFB38N20DPBF

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Specifications

Gate Charge(Qg)91nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)54mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 200V 43A 300W Through Hole TO-220AB

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