Infineon IRFB33N15DPBF

Infineon · FETs & Power MOSFETs · MPN IRFB33N15DPBF

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)56mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.02nF

Technical details

N-Channel 150V 33A 170W Through Hole TO-220AB

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