Infineon IRFB3307ZPBF

Infineon · FETs & Power MOSFETs · MPN IRFB3307ZPBF

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)420pF
Current - Continuous Drain(Id)128A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)5.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.75nF

Technical details

N-Channel 75V 128A 230W Through Hole TO-220AB

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