Infineon IRFB3307PBF

Infineon · FETs & Power MOSFETs · MPN IRFB3307PBF

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Specifications

Configuration-
Gate Charge(Qg)180nC
Drain to Source Voltage75V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.15nF

Technical details

75V 130A 250W Through Hole TO-220AB

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