Infineon IRFB3207ZPbF

Infineon · FETs & Power MOSFETs · MPN IRFB3207ZPbF

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Specifications

Gate Charge(Qg)170nC
Drain to Source Voltage75V
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.92nF

Technical details

N-Channel 75V 170A 300W Through Hole TO-220AB

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