Infineon IRFB3207PBF

Infineon · FETs & Power MOSFETs · MPN IRFB3207PBF

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Specifications

Gate Charge(Qg)260nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)710pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.6nF
TypeN-Channel

Technical details

N-Channel 75V 180A 330W Through Hole TO-220AB

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