Infineon IRFB3206PBF

Infineon · FETs & Power MOSFETs · MPN IRFB3206PBF

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Specifications

Gate Charge(Qg)170nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)210A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.54nF
TypeN-Channel

Technical details

N-Channel 60V 210A 300W Through Hole TO-220AB

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