Infineon IRFB3206GPBF

Infineon · FETs & Power MOSFETs · MPN IRFB3206GPBF

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Specifications

Gate Charge(Qg)170nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)210A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.54nF

Technical details

60V 210A 300W Through Hole TO-220AB

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