Infineon IRFB260NPBF

Infineon · FETs & Power MOSFETs · MPN IRFB260NPBF

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Specifications

Gate Charge(Qg)220nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation380W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.22nF
TypeN-Channel

Technical details

N-Channel 200V 56A 380W Through Hole TO-220AB

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