Infineon · FETs & Power MOSFETs · MPN IRFB13N50APBF
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 81nC@10V |
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 2.73nF |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.91nF |
500V 14A 4V 250W 450mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS