Infineon · FETs & Power MOSFETs · MPN IRFAF50
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| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 180nC@10V |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.85V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 1.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
900V 6.2A 1.85V 150W 1.6Ω@10V 1 N-channel TO-204AA(TO-3) Single FETs, MOSFETs