Infineon IRFAF40

Infineon · FETs & Power MOSFETs · MPN IRFAF40

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)120nC@10V
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)2.9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

900V 4.3A 4V 125W 2.9Ω@10V 1 N-channel TO-204AA(TO-3) Single FETs, MOSFETs

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