Infineon IRFAF30

Infineon · FETs & Power MOSFETs · MPN IRFAF30

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)66nC@10V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)98pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

900V 2A 4.6V 75W 4Ω@10V 1 N-channel TO-204AA(TO-3) Single FETs, MOSFETs

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