Infineon IRF9Z34NPBF

Infineon · FETs & Power MOSFETs · MPN IRF9Z34NPBF

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Specifications

Gate Charge(Qg)35nC
Drain to Source Voltage55V
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)100mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)620pF

Technical details

P-Channel 55V 19A 68W Through Hole TO-220AB

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