Infineon · FETs & Power MOSFETs · MPN IRF9Z34N
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 620pF |
| Type | P-Channel |
P-Channel 55V 19A 68W Through Hole TO-220