Infineon IRF9Z24NPBF

Infineon · FETs & Power MOSFETs · MPN IRF9Z24NPBF

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Specifications

Gate Charge(Qg)19nC
Drain to Source Voltage55V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)92pF
RDS(on)175mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)350pF
TypeP-Channel

Technical details

P-Channel 55V 12A 45W Through Hole TO-220AB

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