Infineon IRF9953TRPBF

Infineon · FETs & Power MOSFETs · MPN IRF9953TRPBF

No reviews yet — be the first to review Infineon IRF9953TRPBF.

Specifications

Gate Charge(Qg)6.1nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)250mΩ@10V
Number2 P-Channel
Input Capacitance(Ciss)190pF
TypeP-Channel

Technical details

P-Channel 30V 2.3A 2W Surface Mount SO-8

Related FETs & Power MOSFETs